Two dimensional materials are very important for the development of new ultra compact electronic devices, but the production of defect free two-dimensional materials is a challenge. However, a team of researchers from Pennsylvania State University said that the discovery of new defects in these 2D materials may give us an in-depth understanding of how to create materials without such defects.

宾夕法尼亚州立大学材料科学与工程助理研究教授Danielle Reifsnyder Hickey说：“二维材料是电子产品新材料，由于它们非常薄，因此可以将设备缩小到非常小的尺寸。这对于使电子设备更强大以便它们可以处理更多数据至关重要。但是，在足够大的区域上生长完美的2D材料以制造大量高质量设备是一个巨大的挑战。”

Danielle reifsnyder Hickey, assistant research professor of materials science and engineering at Pennsylvania State University, said: "two dimensional materials are new materials for electronic products. Because they are very thin, they can reduce the equipment to a very small size. This is crucial to making electronic devices more powerful so that they can process more data. However, growing perfect 2D materials on a large enough area to manufacture a large number of high-quality equipment is a great challenge. "

Reifsnyder Hickey和宾夕法尼亚州立大学的研究人员团队发现了新型缺陷，这些缺陷为创建无缺陷2D材料的方法提供了线索。这项研究最近发表在Nano Letters上。

A team of researchers from reifsnyder Hickey and Penn State University found new defects that provide clues to the way to create defect free 2D materials. The study was recently published in nano letters.

该团队研究了二硫化钨单层薄膜中的缺陷。二硫化钨属于过渡金属二硫属化物的二维晶体，它们是三原子厚的晶体，具有使其成为未来电子产品发展的理想选择。

The team studied defects in tungsten disulfide monolayer films. Tungsten disulfide is a two-dimensional crystal of transition metal disulfide. They are three atom thick crystals, which makes them an ideal choice for the development of electronic products in the future.

该团队发现的缺陷被称为平移晶界，它发生在具有相同取向但平移偏移的两个微晶之间的界面处。通常，晶界将具有不同取向的晶粒连接起来，并会影响材料的导热性和导电性等特性，从而降低它们在电子产品中的价值。为了研究不寻常的平移晶界，该团队结合使用了扫描透射电子显微镜成像和ReaxFF反作用力场模拟。ReaxFF是由宾夕法尼亚州立大学机械工程杰出教授Adri van Duin开发的，他也参与了这项研究。

The defect found by the team is called translational grain boundary, which occurs at the interface between two microcrystals with the same orientation but translational offset. Generally, grain boundaries connect grains with different orientations and affect the thermal conductivity and conductivity of materials, thus reducing their value in electronic products. To study unusual translational grain boundaries, the team used a combination of scanning transmission electron microscopy imaging and ReaxFF reaction field simulation. ReaxFF was developed by Adri van Duin, a distinguished professor of mechanical engineering at Pennsylvania State University, who was also involved in the study.

研究发现，所识别的平移晶界作为单层薄膜中细微但普遍存在的缺陷存在。

It is found that the identified translational grain boundaries exist as subtle but common defects in single-layer films.

根据Reifsnyder Hickey的说法，能够生产出基于二硫化钨单层薄膜的改进型电子产品，缺陷最少，这对于日益视觉化的社会来说是个好消息。

According to reifsnyder Hickey, it is good news for an increasingly visual society to produce improved electronic products based on tungsten disulfide single-layer films with the least defects.